Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors

Journal of Crystal Growth

Volumn 312, Issue 5, 2010, Pages 645-650

  Kotamraju, Siva ^a   Krishnan, Bharat ^a   Melnychuk, Galyna ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

A1. Crystal morphology; A1. Growth models; A3. Chemical vapor deposition; A3. Chloride vapor phase epitaxy; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

A1. GROWTH MODELS; A3. HOT WALL EPITAXY; CHLORIDE VAPOR-PHASE EPITAXY; CRYSTAL MORPHOLOGIES; GROWTH MODELS; HOT-WALL EPITAXY;

AERODYNAMICS; CHEMICAL VAPOR DEPOSITION; CHLORINE; CHLORINE COMPOUNDS; CRYSTAL GROWTH; FLOW OF GASES; MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON CARBIDE; VAPOR PHASE EPITAXY; VAPORS; WINDOWS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74549117943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.017     Document Type: Article

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