Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Journal of Crystal Growth

Volumn 312, Issue 12-13, 2010, Pages 1912-1919

  Das, Hrishikesh ^a   Melnychuk, Galyna ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

A1. Crystal morphology; A1. Growth models; A3. Chemical vapor deposition; A3. Chloride vapor phase epitaxy; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

A1. GROWTH MODELS; A3. HOT WALL EPITAXY; CHLORIDE VAPOR-PHASE EPITAXY; CRYSTAL MORPHOLOGIES; GROWTH MODELS; HOT-WALL EPITAXY;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; CRYSTAL GROWTH; DEFECTS; EDGE DISLOCATIONS; MORPHOLOGY; NUCLEATION; POLYSILICON; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STACKING FAULTS; VAPOR PHASE EPITAXY; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955231850     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.03.022     Document Type: Article

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