Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H-SiC

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5484-5489

  Zvanut, M E ^a   Konovalov, V V ^a   Wang, Haiyan ^a   Mitchel, W C ^b   Mitchell, W D ^b   Landis, G ^b  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON VACANCY; HIGH-PURITY SEMI-INSULATING (HPSI); PHOTOEXCITATION; PHOTOTHRESHOLDS;

ACTIVATION ENERGY; DATA ACQUISITION; FERMI LEVEL; HALL EFFECT; PARAMAGNETIC RESONANCE; POINT DEFECTS;

SILICON CARBIDE;

EID: 10044272301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1797547     Document Type: Article

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