Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Son, N T ^a   Carlsson, P ^a   Gallstrom A ^a   Magnusson, B ^a,b   Janzn E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Norstel AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEFECTS; PARAMAGNETIC RESONANCE; SUBSTRATES; THERMAL ENERGY; VANADIUM;

CARBON VACANCY; CARRIER COMPENSATION; DEEP LEVELS; ELECTRICAL ACTIVATION; INTRINSIC DEFECTS;

SILICON CARBIDE;

EID: 36249004811     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2814058     Document Type: Article

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