Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC

Applied Physics Letters

Volumn 68, Issue 14, 1996, Pages 1963-1965

  Jenny, J R ^a   Skowronski, J ^a   Mitchel, W C ^b   Hobgood, H M ^c   Glass, R C ^c   Augustine, G ^c   Hopkins, R H ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8744315817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115640     Document Type: Article

References (10)

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2. K. Maier, H. D. Muller, and J. Schneider, Mater. Sci. Forum 83-87, 1183 (1992).
3. J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 78, 3839 (1995).
4. M. Kunzer, U. Kaufmann, K. Maier, and J. Schneider, Mater. Sci. Eng. B 29, 118 (1995).
5. J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 78, 3160 (1995).
6. D. L. Barret, R. G. Seidensticker, W. Gaida, and R. H. Hopkins, J. Cryst. Growth 109, 17 (1991).
7. J. Schneider, H. D. Muller, K. Meier, W. Wilkening, F. Fuchs, A. Dornen, S. Leibenzeder, and R. Stein, Appl. Phys. Lett. 56, 1184 (1990).
8. P. Käckell, B. Wenzein, and F. Brechstedt, Phys. Rev. B 50, 10761 (1994) (although they say that the CB offset should be 0.2 eV not 0.15 eV, but their theoretical approach could be off).
9. J. M. Langer, C. Delerue, M. Lannoo, and H. Heinrich, Phys. Rev. B 38, 7723 (1988).
10. M. A. Green, J. Appl. Phys. 67, 2944 (1990).