Fermi level control and deep levels in semi-insulating 4H-SiC

Journal of Applied Physics

Volumn 86, Issue 9, 1999, Pages 5040-5044

  Mitchel, W C ^a   Perrin, R ^a   Goldstein, J ^a   Saxler, A ^a   Roth, M ^a,c   Smith, S R ^a,d   Solomon, J S ^a,d   Evwaraye, A O ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON   (United States)

^c Sterling Semiconductor Inc   (United States)

^d UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001595872     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371476     Document Type: Article

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