SCOPUS 정보 검색 플랫폼

Volumn 433-436, Issue , 2003, Pages 39-44

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

(13) Muller St G a Brady, M F a Brixius, W H a Glass, R C a Hobgood, H McD a Jenny, J R a Leonard, R T a Malta, D P a Powell, A R a Tsvetkov, V F a Allen, S T a Palmour, J W a Carter Jr , C H a

a Arkansas Power Electronics International Inc (United States)

Author keywords

Carbon Vacancy; DLTS; EPR; Micropipe; Resistivity; Semi Insulating; Sublimation Growth; Thermal Conductivity

Indexed keywords

CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); MESFET DEVICES; PARAMAGNETIC RESONANCE; SECONDARY ION MASS SPECTROMETRY; THERMAL CONDUCTIVITY;

SEMI-INSULATING MATERIALS;

SILICON CARBIDE;

EID: 0242665541 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (59)

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