Germanium doping for improved silicon substrates and devices

Journal of Crystal Growth

Volumn 317, Issue 1, 2011, Pages 8-15

  Vanhellemont, J ^a   Chen, J ^b,f   Lauwaert, J ^a   Vrielinck, H ^a   Xu, W ^b   Yang, D ^b   Raf, J M ^c   Ohyama, H ^d   Simoen, E ^e  

^a GHENT UNIVERSITY   (Belgium)

^b ZHEJIANG UNIVERSITY   (China)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^d KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^e IMEC   (Belgium)

^f DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

A1. Characterization; A1. Defects; A2. Czochralski method; B1. Germanium silicon alloys; B2. Semiconducting silicon; B3. Diodes

Indexed keywords

A1. CHARACTERIZATION; A1. DEFECTS; A2. CZOCHRALSKI METHOD; B1. GERMANIUM SILICON ALLOYS; B2. SEMICONDUCTING SILICON; B3. DIODES;

BUDGET CONTROL; CRYSTAL GROWTH FROM MELT; CRYSTALS; DEFECTS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); GERMANIUM; GERMANIUM ALLOYS; MAGNETIC FIELDS; OXYGEN; OXYGEN VACANCIES; PRECIPITATION (CHEMICAL); QUARTZ; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SUBSTRATES; THERMOANALYSIS; VACANCIES;

SILICON WAFERS;

EID: 79952038308     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.024     Document Type: Article

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