Degradation of Si1-xGex epitaxial devices by proton irradiation

Applied Physics Letters

Volumn 69, Issue 16, 1996, Pages 2429-2431

  Ohyama, H ^a   Hayama, K ^a   Vanhellemont, J ^b   Poortmans, J ^b   Caymax, M ^b   Takami, Y ^c   Sunaga, H ^d   Nashiyama, I ^d   Uwatoko, Y ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c RIKKYO UNIVERSITY   (Japan)

^d JAPAN ATOMIC ENERGY AGENCY   (Japan)

^e SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007506614     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117660     Document Type: Article

References (9)

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