Germanium effect on void defects in Czochralski silicon

Journal of Crystal Growth

Volumn 243, Issue 3-4, 2002, Pages 371-374

  Yang, Deren ^a   Yu, Xuegong ^a   Ma, Xiangyang ^a   Xu, Jin ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Deffects; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HIGH TEMPERATURE EFFECTS; MICROELECTRONICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

FLOW PATTERN DEFECTS (FPD);

CRYSTAL GROWTH FROM MELT;

EID: 0036724234     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01572-5     Document Type: Article

References (21)