Effects of B and Ge codoping on minority carrier lifetime in Ga-doped Czochralski-silicon

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Arivanandhan, Mukannan ^a,b   Gotoh, Raira ^a   Fujiwara, Kozo ^a   Uda, Satoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; B AND GE CODOPING; CO-DOPED; CO-DOPING; CZOCHRALSKI; DEFECT REACTIONS; FLOW PATTERN DEFECTS; GA-DOPED; GE CONCENTRATIONS; GROWN-IN MICRODEFECTS; LIGHT-INDUCED DEGRADATION; MINORITY CARRIER LIFETIMES; OXYGEN DIMERS; POSTGROWTH COOLING; SI CRYSTALS;

BIODEGRADATION; CARRIER CONCENTRATION; CRYSTALS; DEFECT DENSITY; DEGRADATION; DOPING (ADDITIVES); FLOW PATTERNS; GALLIUM; GERMANIUM; OXYGEN; SILICON;

CARRIER LIFETIME;

EID: 67650711620     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159038     Document Type: Article

References (22)

1. R. L. Crabb, Proceedings of the Ninth IEEE Photovoltaic Specialists Conference, 1972 (IEEE, New York, 1972), p. 329.
2. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, J. Appl. Phys. 0021-8979 90, 2397 (2001). 10.1063/1.1389076
3. J. Schmidt, A. G. Aberle, and R. Hezel, Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA (IEEE, New York, 1997), p. 13.
4. S. W. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling, Proceedings of the Second World Conference on Photovoltaic Energy Conversion, Vienna, Austria (European Commission, Ispra, Italy, 1998), p. 1343.
5. J. Schmidt and K. Bothe, Phys. Rev. B 0163-1829 69, 024107 (2004). 10.1103/PhysRevB.69.024107
6. J. C. Bourgoin, N. de Angelis, and G. Strobl, Proceedings of the 16th European Photovoltaic Solar Energy Conversion, Glasgow, UK (James & James, London, 2000), p. 1356.
7. A. Herguth, G. Schubert, M. Kaes, and G. Hahn, Prog. Photovoltaics 1062-7995 16, 135 (2008). 10.1002/pip.779
8. F. A. Trumbore, Bell Syst. Tech. J. 0005-8580 39, 212 (1960).
9. V. Meemongkolkiat, K. Nakayashiki, A. Rohatgi, G. Crabtree, J. Nickerson, and T. L. Jester, Prog. Photovoltaics 1062-7995 14, 125 (2006). 10.1002/pip.659
10. X. Huang, M. Arivanandhan, R. Gotoh, T. Hoshikawa, and S. Uda, J. Cryst. Growth 0022-0248 310, 3335 (2008). 10.1016/j.jcrysgro.2008.04.013
11. T. Fukuda and A. Ohsawa, Appl. Phys. Lett. 0003-6951 60, 1184 (1992). 10.1063/1.107399
12. I. Yonenaga, T. Taishi, X. Huang, and K. Hoshikawa, J. Appl. Phys. 0021-8979 93, 265 (2003). 10.1063/1.1527970
13. M. Arivanandhan, R. Gotoh, K. Fujiwara, and S. Uda, Appl. Phys. Lett. 0003-6951 94, 072102 (2009). 10.1063/1.3085959
14. M. J. Kerr and A. Cuevas, J. Appl. Phys. 0021-8979 91, 2473 (2002). 10.1063/1.1432476
15. J. Zhang, C. Liu, Q. Zhou, J. Wang, Q. Hao, H. Zhang, and Y. Li, J. Cryst. Growth 0022-0248 269, 310 (2004). 10.1016/j.jcrysgro.2004.05.095
16. A. J. R. De Kock, Appl. Phys. Lett. 0003-6951 16, 100 (1970). 10.1063/1.1653111
17. V. V. Voronkov and R. Falster, J. Cryst. Growth 0022-0248 194, 76 (1998). 10.1016/S0022-0248(98)00550-8
18. W. von Ammon, E. Dornberger, H. Oelkrug, and H. Weidner, J. Cryst. Growth 0022-0248 151, 273 (1995). 10.1016/0022-0248(95)00063-1
19. V. V. Voronkov and R. Falster, Microelectron. Eng. 0167-9317 56, 165 (2001). 10.1016/S0167-9317(00)00521-9
20. A. Brelot and J. Charlemagne, Radiat. Eff. Defects Solids 1042-0150 9, 65 (1971). 10.1080/00337577108242034
21. L. I. Murin, T. Hallberg, V. P. Markevich, and J. L. Lindström, Phys. Rev. Lett. 0031-9007 80, 93 (1998). 10.1103/PhysRevLett.80.93
22. H. Sawada and K. Kaeakami, Phys. Rev. B 0163-1829 62, 1851 (2000). 10.1103/PhysRevB.62.1851