Germanium doping of Si substrates for improved device characteristics and yield

ECS Transactions

Volumn 27, Issue 1, 2010, Pages 1041-1046

  Vanhellemont, J ^a   Chen, J ^b,c   Xu, W ^b   Yang, D ^b   Rafi, J M ^d   Ohyama, H ^e   Simoen, E ^f  

^a GHENT UNIVERSITY   (Belgium)

^b ZHEJIANG UNIVERSITY   (China)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d CSIC   (Spain)

^e KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^f IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; CRYSTALS; OXYGEN; OXYGEN VACANCIES; PRECIPITATION (CHEMICAL); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SUBSTRATES;

DEVICE CHARACTERISTICS; DEVICE PROCESSING; GERMANIUM DOPING; INTERNAL GETTERING; INTERSTITIAL OXYGEN CONCENTRATION; OXYGEN PRECIPITATION; SUBSTRATE CHARACTERISTICS; VOID NUCLEATION;

SILICON WAFERS;

EID: 84863116690     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3360748     Document Type: Conference Paper

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