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Volumn 9, Issue 1-3, 2006, Pages 110-113

Effect of light germanium doping on thermal donors in Czochralski silicon wafers

Author keywords

Germanium doping; Silicon; Thermal donor

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; SEMICONDUCTOR DOPING; SILICON WAFERS;

EID: 33744536735     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.034     Document Type: Article
Times cited : (13)

References (10)
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  • 3
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    • Observation of five additional thermal donor species TD12 to TD16 and of regrowth of themal donors at initial stage of the new oxygen donor formation in Czochralski-grown silicon
    • Götz W., Pensl G., and Zulehner W. Observation of five additional thermal donor species TD12 to TD16 and of regrowth of themal donors at initial stage of the new oxygen donor formation in Czochralski-grown silicon. Phys Rev B 46 (1992) 4312-4315
    • (1992) Phys Rev B , vol.46 , pp. 4312-4315
    • Götz, W.1    Pensl, G.2    Zulehner, W.3
  • 4
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    • Infrared spectra of heat treatment centers in silicon
    • Hrostowski H.J., and Kaiser R.H. Infrared spectra of heat treatment centers in silicon. Phys Rev Lett 1 (1958) 199-200
    • (1958) Phys Rev Lett , vol.1 , pp. 199-200
    • Hrostowski, H.J.1    Kaiser, R.H.2
  • 5
    • 0036962272 scopus 로고    scopus 로고
    • Dislocation behavior in heavily germanium-doped silicon crystal
    • Taishi T., Huang X., Yonenaga I., and Hoshikawa K. Dislocation behavior in heavily germanium-doped silicon crystal. Mat Sci Semicond Proc 5 (2002) 409-412
    • (2002) Mat Sci Semicond Proc , vol.5 , pp. 409-412
    • Taishi, T.1    Huang, X.2    Yonenaga, I.3    Hoshikawa, K.4
  • 6
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    • Germanium effect on void defects in Czochralski silicon
    • Yang D., Yu X., Ma X., Xu J., Li L., and Que D. Germanium effect on void defects in Czochralski silicon. J Cryst Growth 243 (1998) 371-375
    • (1998) J Cryst Growth , vol.243 , pp. 371-375
    • Yang, D.1    Yu, X.2    Ma, X.3    Xu, J.4    Li, L.5    Que, D.6
  • 7
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    • Intrinsic gettering in germanium-doped Czochralski silicon crystals
    • Yu X., Yang D., Ma X., Li H., Shen Y., Tian D., et al. Intrinsic gettering in germanium-doped Czochralski silicon crystals. J Cryst Growth 250 (2003) 359-363
    • (2003) J Cryst Growth , vol.250 , pp. 359-363
    • Yu, X.1    Yang, D.2    Ma, X.3    Li, H.4    Shen, Y.5    Tian, D.6
  • 9
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    • The effect of germanium doping on oxygen donors in Czochralski-grown silicon
    • Li H., Yang D., Yu X., Ma X., Tian D., Li L., et al. The effect of germanium doping on oxygen donors in Czochralski-grown silicon. J Phys: Condens Matter 16 (2004) 5745-5749
    • (2004) J Phys: Condens Matter , vol.16 , pp. 5745-5749
    • Li, H.1    Yang, D.2    Yu, X.3    Ma, X.4    Tian, D.5    Li, L.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.