Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4671-4673

  Ohyama, H ^a   Rafi J M ^b   Campabadal, F ^b   Takakura, K ^a   Simoen, E ^c   Chen, J ^d   Vanhellemont, J ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c IMEC   (Belgium)

^d ZHEJIANG UNIVERSITY   (China)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

CZ Si; CZ SiGe; Degradation; Diodes; Electron irradiation

Indexed keywords

C-V CHARACTERISTIC; CZ-SI; CZ-SIGE; CZOCHRALSKI SILICON; DOPED SILICON; FORWARD CURRENTS; FORWARD VOLTAGE; INDUCED DAMAGE; SI-BASED;

DEGRADATION; DIODES; DOPING (ADDITIVES); ELECTRONS; GERMANIUM; PHOSPHORUS; RADIATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; SUBSTRATES;

ELECTRON IRRADIATION;

EID: 74349117459     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.130     Document Type: Article

References (4)

1. Ohyama H., Vanhellemont J., Takami Y., Hayama K., Sunaga H., Poortmans J., Caymax M., and Clauws P. IEEE Trans. Nucl. Sci. 41 (1994) 2437
2. Chen J., Yang D., Li H., Ma X., Tian D., Li L., and Que D. J. Cryst. Growth 306 (2007) 262
3. Martínez C., Rafí J.M., Lozano M., Campabadal F., Santander J., Fonseca L., Ullán M., and Moreno A. IEEE Trans. Nucl. Sci. 49 (2002) 1377
4. Rafí J.M., Boulord C., Hayama K., Ohyama H., Campabadal F., Pellegrini G., Lozano M., Simoen E., and Claeys C. Nucl. Instr. Methods A 604 (2009) 258