Formation mechanism of grown-in defects in CZ silicon crystals based on thermal gradients measured by thermocouples near growth interfaces

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 16-29

  Abe, Takao ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COOLING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; HEAT FLUX; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SINGLE CRYSTALS; STACKING FAULTS; THERMAL GRADIENTS; THERMOCOUPLES;

DISLOCATION LOOPS; HEAT FLUX BALANCE EQUATION; INTERSTITIALS; LATENT HEAT; VACANCIES; VORONKOV THEORY; X RAY TOPOGRAPH;

POINT DEFECTS;

EID: 0033877479     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00428-6     Document Type: Article

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