Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4723-4726

  Rafi J M ^a   Vanhellemont, J ^b   Simoen, E ^c   Chen, J ^d   Zabala, M ^a   Campabadal, F ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b GHENT UNIVERSITY   (Belgium)

^c IMEC   (Belgium)

^d ZHEJIANG UNIVERSITY   (China)

Author keywords

Carrier lifetime; Czochralski Si; Float zone Si; Germanium doped silicon; Magnetic czochralski Si; Thermal donors

Indexed keywords

CZOCHRALSKI SI; DOPED SILICON; FLOAT ZONE SI; FLOAT ZONES; MAGNETIC CZOCHRALSKI; THERMAL DONOR;

CARRIER LIFETIME; DIODES; DOPING (ADDITIVES); FABRICATION; GERMANIUM; MICROELECTRONICS; SILICON; SILICON WAFERS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74349096841     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.150     Document Type: Article

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