Dynamic characteristics of dislocations in Ge-doped and (Ge+B) codoped silicon

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 265-269

  Yonenaga, I ^a   Taishi, T ^b   Huang, X ^b,c   Hoshikawa, K ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

^c Silicon Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GERMANIUM; SEMICONDUCTOR DOPING;

ETCH PIT TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0037249105     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527970     Document Type: Article

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