Germanium effect on oxygen precipitation in Czochralski silicon

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4161-4165

  Li, Hong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Yu, Xuegong ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; OXIDATION; PRECIPITATION (CHEMICAL); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SILICON; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

BULK MICRODEFECTS (BMD); OXYGEN CONCENTRATION; OXYGEN PRECIPITATION; THERMAL DONORS;

OXYGEN;

EID: 7544237922     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790578     Document Type: Article

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