Crystal-originated particles in germanium-doped Czochralski silicon crystal

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 262-268

  Chen, Jiahe ^a   Yang, Deren ^a   Li, Hong ^a   Ma, Xiangyang ^a   Tian, Daxi ^a   Li, Liben ^a   Que, Duainlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Doping; A1. Germanium; A1. Point defects; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

ANNEALING; GERMANIUM; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMODYNAMIC STABILITY;

FREE VACANCY CONCENTRATION; OXYGEN INTERSTITIALS; SINGLE-CRYSTAL GROWTH; STRESS COMPENSATION;

CRYSTAL GROWTH FROM MELT;

EID: 34547686506     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.034     Document Type: Article

References (22)

1. Ryuta J., Morita E., Tanakal T., and Shimanuki Y. Jpn. J. Appl. Phys. 29 (1990) L1947
2. Itsumi M., Tomita M., and Yamawaki M. J. Appl. Phys. 78 (1995) 1940
3. Huth S., Breitenstein O., Huber A., and Lambert U. J. Appl. Phys. 88 (2000) 4000
4. Wang Z., and Brown R.A. J. Crystal Growth 231 (2001) 442
5. Voronkov V.V., and Falster R. J. Crystal Growth 198-199 (1998) 399
6. Graf D., Lambert U., Brohl M., Ehlert A., Wahlich R., and Wagner P. Mater. Sci. Eng. B 36 (1996) 50
7. Park B.M., Seo G.H., and Kim G. J. Crystal Growth 222 (2001) 74
8. von Ammon W., Holzl R., Virbulis J., Dornberger E., Schmolke R., and Graf D. J. Crystal Growth 226 (2001) 19
9. Yang D., Yu X., Ma X., Xu J., Li L., and Que D. J. Crystal Growth 243 (2002) 371
10. Li H., Yang D., Ma X., Yu X., and Que D. J. Appl. Phys. 96 (2004) 4161
11. Chen J., Yang D., Li H., Ma X., and Que D. J. Appl. Phys. 99 (2006) 073509
12. Yu X., Yang D., Ma X., Li H., Shen Y., Tian D., Li L., and Que D. J. Crystal Growth 250 (2003) 359
13. Voronkov V.V., and Falster R. J. Electrochem. Soc. 149 (2002) G167
14. Jiang H. Physica B 376 (2006) 841
15. Voronkov V.V., and Falster R. J. Crystal Growth 194 (1998) 76
16. Wijaranakula W. Appl. Phys. Lett. 62 (1993) 2974
17. Suhren M., Gräf D., Lambert U., and Wagner P. J. Electrochem. Soc. 144 (1997) 4041
18. Kawasaki T., and Katayama-Yoshida H. Physica B 302-303 (2001) 163
19. Itumi M., Akiya H., Ueki T., Tomita M., Yamawaki M., and Kawasaki T. J. Appl. Phys 78 (1995) 5894
20. Yang D., Chen J., Li H., Ma X., Tian D., Li L., and Que D. J. Crystal Growth 292 (2006) 266
21. Yu X., Yang D., Ma X., Xu J., Li L., and Que D. Microelectron. Eng. 66 (2003) 289
22. Adachi N., Hisatomi T., Sano M., and Tsuya H. J. Electrochem. Soc. 147 (2000) 350