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Volumn 157, Issue 5, 2010, Pages

Improved electrical performance and thermal stability of HfO2 / Al2 O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS-HFETs

(2) Tian, F a Chor, E F a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BI-LAYER; DEVICE PERFORMANCE; ELECTRICAL PERFORMANCE; ELEVATED TEMPERATURE; GATE-LEAKAGE CURRENT; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; MAXIMUM DRAIN CURRENT; METAL-INSULATOR-SEMICONDUCTORS; ORDER OF MAGNITUDE; PEAK TRANSCONDUCTANCE; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; THERMAL STABILITY;

ALUMINUM; DRAIN CURRENT; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SWITCHING CIRCUITS; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS;

HAFNIUM COMPOUNDS;

EID: 77951198409 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3353799 Document Type: Article

Times cited : (27)

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