Influence of ammonia in the deposition process of SiN on the performance of SiN/AIGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on 4-in. Si(111)

Applied Physics Express

Volumn 2, Issue 3, 2009, Pages

  Arulkumaran, Subramaniam ^a   Hong, Liu Zhi ^a   Ing, Ng Geok ^a   Selvaraj, Susai Lawrence ^b   Egawa, Takashi ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4-IN. SI; AIGAN/GAN; BREAK DOWN VOLTAGES; CHEMICAL VAPOR DEPOSITED; CURRENT COLLAPSE; CUT-OFF FREQUENCIES; DEPOSITION PROCESS; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; GATE-LEAKAGE CURRENTS; METAL - INSULATOR - SEMICONDUCTORS; SMALL SIGNALS;

AMMONIA; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; ELECTRODEPOSITION; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION OF GASES; METAL INSULATOR BOUNDARIES; MIS DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILANES; SWITCHING CIRCUITS; TRANSISTORS;

SILICON NITRIDE;

EID: 62549087910     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.031001     Document Type: Article

References (22)

1. G. Simin et al.: Electron. Lett. 36 (2000) 2043.
2. P. Kordos et al.: Appl. Phys. Lett. 87 (2005) 143501.
3. V. Adivarahan et al.: IEEE Electron Device Lett. 24 (2003) 541.
4. S. Arulkumaran et al.: Jpn. J. Appl. Phys. 44 (2005) 812.
5. S. Arulkumaran et al.: Appl. Phys. Lett. 73 (1998) 809.
6. M. Marso et al.: IEEE Trans. Electron Devices 53 (2006) 1517.
7. M. Sawada et al.: J. Cryst. Growth 189-190 (1998) 706.
8. Y. Z. Chiou: J. Electrochem. Soc. 151 (2004) 863.
9. R. Nakasaki et al.: Physica E 7 (2000) 953.
10. F. Ren et al.: Solid-State Electron. 42 (1998) 2177.
11. T. Hashizume et al.: J. Appl. Phys. 88 (2000) 1983.
12. Y. Cai et al.: Appl. Phys. Lett. 86 (2005) 032109.
13. T. Hashizume et al.: Appl. Phys. Lett. 83 (2003) 2952.
14. Y. Yue et al.: IEEE Electron Device Lett. 29 (2008) 838.
15. M. A. Khan et al.: Appl. Phys. Lett. 77 (2000) 1339.
16. X. Hu et al.: Appl. Phys. Lett. 79 (2001) 2832.
17. S. Hoshi et al.: IEICE Trans. Electron. E89-C (2006) 1052.
18. A. P. Edwards et al.: IEEE Electron Device Lett. 26 (2005) 225.
19. S. Goro et al.: Appl. Surf. Sci. 33-34 (1988) 784.
20. N. Maeda et al.: Jpn. J. Appl. Phys. 44 (2005) L646.
21. P. Kordos et al.: Appl. Phys. Lett. 90 (2007) 123513.
22. S. W. King et al.: J. Appl. Phys. 84 (1998) 5248.