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Volumn 108, Issue 1, 2010, Pages

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator- semiconductor-heterostructure capacitors

(8) Fagerlind, M a Allerstam, F a Sveinbjornsson E O a,c Rorsman, N a Kakanakova Georgieva, A b Lundskog, A b Forsberg, U b Janzn E b

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b LINKÖPING UNIVERSITY (Sweden)

c UNIVERSITY OF ICELAND (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; ALGAN/ALN/GAN; CAPACITANCE VOLTAGE; CHEMICAL VAPOR DEPOSITED; DEPOSITION METHODS; DEPOSITION TECHNIQUE; EMISSION TIME; FIXED CHARGES; HETEROSTRUCTURE MATERIALS; HETEROSTRUCTURES; INTERFACE STATE; LOW DENSITY; LOW PRESSURES; METAL-INSULATOR-SEMICONDUCTORS; PASSIVATING LAYER; PEAK DENSITY; SILICON NITRIDE PASSIVATION;

CAPACITANCE; CAPACITORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MOS CAPACITORS; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON NITRIDE; SMELTING;

HETEROJUNCTIONS;

EID: 77955212187 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3428442 Document Type: Article

Times cited : (92)

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