ZrO 2/(Al)GaN metal-oxide-semiconductor structures: Characterization and application

Semiconductor Science and Technology

Volumn 19, Issue 12, 2004, Pages 1364-1368

  Kuzmik J ^a,c   Konstantinidis, G ^b   Harasek, S ^a   Hascik S ^c   Bertagnolli, E ^a   Georgakilas, A ^b   Pogany, D ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT STRUCTURES; GATE CONTACTS; SEMICONDUCTOR STRUCTURES; VOLTAGE SHIFT;

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LEAKAGE CURRENTS; THRESHOLD VOLTAGE; ZIRCONIUM COMPOUNDS;

MOS DEVICES;

EID: 10444275718     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/12/006     Document Type: Article

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