Simulations of capacitance-voltage-temperature behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN structures

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Miczek, Marcin ^a   Adamowicz, Boguslawa ^a   Mizue, Chihoko ^b   Hashizume, Tamotsu ^b  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN; C-V CURVE; CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE CHARACTERISTICS; EXPERIMENTAL CHARACTERISTICS; FIXED CHARGES; HETEROSTRUCTURES; HIGHER TEMPERATURES; INTERFACE LEVEL; INTERFACE STATE; ROOM TEMPERATURE; SLOW ELECTRONS; TEMPERATURE BEHAVIOR;

CAPACITANCE; HETEROJUNCTIONS;

GALLIUM NITRIDE;

EID: 77952482836     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C092     Document Type: Article

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