HfO2/AIGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam

Physica Status Solidi - Rapid Research Letters

Volumn 1, Issue 5, 2007, Pages 199-201

  Tokranov, V ^a   Rumyantsev, S L ^b,c   Shur, M S ^b   Gaska, R ^d   Oktyabrsky, S ^a   Jain, R ^d   Pala, N ^b,d  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LEAKAGE CURRENTS; PERMITTIVITY; THRESHOLD VOLTAGE; ULTRAHIGH VACUUM; VACUUM DEPOSITION;

INTERFACE TRAPS;

HAFNIUM COMPOUNDS;

EID: 38749139859     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200701136     Document Type: Article

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