MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Semiconductor Science and Technology

Volumn 22, Issue 12, 2007, Pages 1272-1275

  Abermann, S ^a   Pozzovivo, G ^a   Kuzmik, J ^a,b   Strasser, G ^a   Pogany, D ^a   Carlin, J F ^c   Grandjean, N ^c   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; MOS DEVICES; SCHOTTKY BARRIER DIODES;

DIKETONATE PRECURSORS; GATE CURRENT LEAKAGE; HIGH K GATE DIELECTRICS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 36448997769     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/12/005     Document Type: Article

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