Low-energy path to dense HfO2 thin films with aqueous precursor

Chemistry of Materials

Volumn 23, Issue 4, 2011, Pages 945-952

  Jiang, Kai ^a   Anderson, Jeremy T ^a   Hoshino, Ken ^a   Li, Dong ^b   Wager, John F ^a   Keszler, Douglas A ^a  

^a OREGON STATE UNIVERSITY   (United States)

^b ASM AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS PRECURSOR; AQUEOUS SOLUTIONS; BREAKDOWN FIELD; CAPACITOR DIELECTRICS; FILM STRUCTURE; GATE LEAKAGES; HIGH QUALITY; INDIUM GALLIUM ZINC OXIDES; LOW ENERGIES; LOW IONIC STRENGTH; MODERATE TEMPERATURE; ORGANIC ADDITIVES; SEM; SPIN COAT; TRANSISTOR PERFORMANCE; VAPOR-DEPOSITION TECHNIQUES; X RAY REFLECTIVITY;

CAPACITORS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INDIUM; IONIC STRENGTH; LEAKAGE CURRENTS; OXIDE FILMS; REFRACTIVE INDEX; SPECTROSCOPIC ELLIPSOMETRY; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 79951649873     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm102082j     Document Type: Article

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