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Journal of Electroceramics

Volumn 21, Issue 1-4 SPEC. ISS., 2008, Pages 499-502

Preparation of hafnium oxide thin films by sol-gel method

(5) Wang, Z J a Kumagai, T a Kokawa, H a Ichiki, M b Maeda, R b

a TOHOKU UNIVERSITY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Crystalline structure; Electrical properties; Hafnium oxide; Microstructure; Thin film

Indexed keywords

APPLIED ELECTRIC FIELD; CAPACITIVE-TYPE; CRYSTALLINE STRUCTURE; CURRENT-VOLTAGE MEASUREMENTS; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; HAFNIUM OXIDE; HAFNIUM OXIDE THIN FILMS; HAFNIUM OXIDES; MEAN-GRAIN SIZE; MEMS APPLICATIONS; MEMS SWITCHES; MONOCLINIC HFO; SI SUBSTRATES; SOL-GEL METHODS; SPHERULITE GRAIN STRUCTURE; TEM;

CRYSTALLINE MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FILM PREPARATION; GELATION; GELS; GRAIN SIZE AND SHAPE; HAFNIUM; HAFNIUM COMPOUNDS; MEMS; MICROCRYSTALLINE SILICON; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; OXIDES; SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

OXIDE FILMS;

EID: 67651114126 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-007-9228-x Document Type: Article

Times cited : (21)

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