Structure and dielectric properties of HfO2 films prepared by a sol-gel route

Journal of Sol-Gel Science and Technology

Volumn 47, Issue 2, 2008, Pages 165-172

  Blanchin, M G ^a   Canut, B ^a   Lambert, Y ^a,b   Teodorescu, V S ^c   Barau A ^d   Zaharescu, M ^d  

^a UNIVERSITÉ LYON 1   (France)

^b UNIVERSITÉ DE SAVOIE   (France)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^d INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

Author keywords

High k dielectric; Sol gel method; Thin films; Transmission electron microscopy

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DIELECTRIC PROPERTIES; FILM PREPARATION; HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; INTERFACES (MATERIALS); MULTILAYER FILMS; SILICA; SILICON OXIDES; SILICON WAFERS; SOL-GEL PROCESS; SOL-GELS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURES; CAPACITIVE MEASUREMENTS; CRYSTALLINE ORIENTATIONS; DIP COATING TECHNIQUES; MONO- AND MULTILAYER; NANOPOROUS STRUCTURES; SILICON SUBSTRATES; THIN-FILM STRUCTURE;

THIN FILMS;

EID: 46149097609     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-008-1758-4     Document Type: Article

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