Sol-gel fabrication of dielectric HfO2 nano-films; formation of uniform, void-free layers and their superior electrical properties

Chemistry of Materials

Volumn 17, Issue 2, 2005, Pages 450-458

  Aoki, Yoshitaka ^a   Kunitake, Toyoki ^a   Nakao, Aiko ^b  

^a Japan Science and Technology Agency   (Japan)

^b RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; DIELECTRIC MATERIALS; HYDROLYSIS; LEAKAGE CURRENTS; PERMITTIVITY; SILICON WAFERS; SOL-GELS; SPIN COATING;

DIELECTRIC BREAKDOWN; METAL OXIDES; NANOFILMS; SOL-GEL FILMS;

NANOSTRUCTURED MATERIALS;

HAFNIUM; METAL OXIDE; OXIDE;

ANALYTIC METHOD; ARTICLE; CHEMICAL COMPOSITION; CONTAMINATION; DECOMPOSITION; DIELECTRIC CONSTANT; ELECTRIC CURRENT; GEL; HYDROXYLATION; IMAGE ANALYSIS; NANOPARTICLE; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VAPORIZATION;

EID: 12344261411     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm048971r     Document Type: Article

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