Extraction of the effective mobility of In0.53 Ga0.47As MOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 316-318

  Hinkle, Christoper L ^a   Sonnet, Arif M ^a   Chapman, Richard A ^a   Vogel, Eric M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

Effective mobility; III V metal oxide semiconductor field effect transistor (MOSFET); InGaAs; Interface states; Split C V

Indexed keywords

EFFECTIVE MOBILITY; III-V METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET); INGAAS; INTERFACE STATES; SPLIT C-V;

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; METAL RECOVERY; MOSFET DEVICES; SEMICONDUCTING INDIUM;

FIELD EFFECT TRANSISTORS;

EID: 65449157862     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2012880     Document Type: Article

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