Chemical and electrical characterization of Gd2O 3/GaAs interface improved by sulfur passivation

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4811-4816

  Yang, Jun Kyu ^a   Kang, Min Gu ^a   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON BEAMS; MOS DEVICES; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTION-BAND OFFSET; ELECTRICAL CHARACTERIZATION; GATE DIELECTRIC FILMS; SULFUR PASSIVATION;

SULFUR;

EID: 9744269947     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1785851     Document Type: Article

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