SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 8, 2009, Pages

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53 Ga0.47 As surfaces by atomic layer deposition

(12) Long, R D a O'Connor, E a Newcomb, S B b Monaghan, S a Cherkaoui, K a Casey, P c Hughes, G c Thomas, K K a Chalvet, F a Povey, I M a Pemble, M E a Hurley, P K a

a UNIVERSITY COLLEGE CORK (Ireland)

b Glebe Scientific Ltd (Ireland)

c DUBLIN CITY UNIVERSITY (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; CHEMICAL COMPOSITIONS; CONDUCTANCE METHOD; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRICAL CHARACTERIZATION; EX SITU; FILM DEPOSITION; HIGH RESOLUTION; IN-SITU TREATMENT; IN0.53GA0.47AS; INTERFACE OXIDE; INTERFACE STATE DENSITY; INTERLAYER OXIDES; METAL-ORGANIC VAPOR PHASE EPITAXY; NATIVE OXIDES; SURFACE PREPARATION;

ATOMIC LAYER DEPOSITION; CHEMICAL ANALYSIS; CHEMICAL PROPERTIES; CRYSTAL GROWTH; DEPOSITION; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; FILM PREPARATION; GALLIUM; HAFNIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEAR INSTRUMENTATION; ORGANOMETALLICS; OXIDES; PHASE INTERFACES; STRUCTURAL ANALYSIS; SURFACE TREATMENT; THIN FILMS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 70350728552 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3243234 Document Type: Article

Times cited : (28)

References (28)

1
- 41749086201
- 0741-3106,. 10.1109/LED.2008.917817
- Y. Xuan, Y. Q. Wu, and P. D. Ye, IEEE Electron Device Lett. 0741-3106 29, 294 (2008). 10.1109/LED.2008.917817
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 294
- Xuan, Y.¹ Wu, Y.Q.² Ye, P.D.³

2
- 44849083052
- 0003-6951,. 10.1063/1.2931031
- S. Koveshnikov, N. Goel, P. Majhi, H. Wen, M. B. Santos, S. Oktyabrsky, V. Tokranov, R. Kambhampati, R. Moore, F. Zhu, J. Lee, and W. Tsai, Appl. Phys. Lett. 0003-6951 92, 222904 (2008). 10.1063/1.2931031
- (2008) Appl. Phys. Lett. , vol.92 , pp. 222904
- Koveshnikov, S.¹ Goel, N.² Majhi, P.³ Wen, H.⁴ Santos, M.B.⁵ Oktyabrsky, S.⁶ Tokranov, V.⁷ Kambhampati, R.⁸ Moore, R.⁹ Zhu, F.¹⁰ Lee, J.¹¹ Tsai, W.¹²

3
- 43049135488
- Indium stability on InGaAs during atomic H surface cleaning
- DOI 10.1063/1.2919047
- F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes, Appl. Phys. Lett. 0003-6951 92, 171906 (2008). 10.1063/1.2919047 (Pubitemid 351624888)
- (2008) Applied Physics Letters , vol.92 , Issue.17 , pp. 171906
- Aguirre-Tostado, F.S.¹ Milojevic, M.² Hinkle, C.L.³ Vogel, E.M.⁴ Wallace, R.M.⁵ McDonnell, S.⁶ Hughes, G.J.⁷

4
- 36849066892
- Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors
- DOI 10.1063/1.2822892
- Y. Xuan, P. D. Ye, and T. Shen., Appl. Phys. Lett. 0003-6951 91, 232107 (2007). 10.1063/1.2822892 (Pubitemid 350234452)
- (2007) Applied Physics Letters , vol.91 , Issue.23 , pp. 232107
- Xuan, Y.¹ Ye, P.D.² Shen, T.³

5
- 49149131108
- 0163-1918.
- M. K. Hudait, G. Dewey, S. Datta, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, R. Pillarisetty, W. Rachmady, M. Radosavljevic, T. Rakshit, and R. Chau, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 625.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 625
- Hudait, M.K.¹ Dewey, G.² Datta, S.³ Fastenau, J.M.⁴ Kavalieros, J.⁵ Liu, W.K.⁶ Lubyshev, D.⁷ Pillarisetty, R.⁸ Rachmady, W.⁹ Radosavljevic, M.¹⁰ Rakshit, T.¹¹ Chau, R.¹²

6
- 33750198688
- 2 gate dielectric grown by atomic-layer deposition
- DOI 10.1063/1.2363959
- N. Goel, P. Majhi, C. O. Chui, W. Tsai, D. Choi, and J. S. Harris, Appl. Phys. Lett. 0003-6951 89, 163517 (2006). 10.1063/1.2363959 (Pubitemid 44601757)
- (2006) Applied Physics Letters , vol.89 , Issue.16 , pp. 163517
- Goel, N.¹ Majhi, P.² Chui, C.O.³ Tsai, W.⁴ Choi, D.⁵ Harris, J.S.⁶

7
- 39749137699
- Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters
- DOI 10.1063/1.2883967
- Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, C. C. Liao, and K. Y. Cheng, Appl. Phys. Lett. 0003-6951 92, 072901 (2008). 10.1063/1.2883967 (Pubitemid 351304853)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 072901
- Chang, Y.C.¹ Huang, M.L.² Lee, K.Y.³ Lee, Y.J.⁴ Lin, T.D.⁵ Hong, M.⁶ Kwo, J.⁷ Lay, T.S.⁸ Liao, C.C.⁹ Cheng, K.Y.¹⁰

8
- 49749144188
- 0003-6951,. 10.1063/1.2972107
- H. -S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, J. C. Lee, P. Majhi, N. Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Appl. Phys. Lett. 0003-6951 93, 062111 (2008). 10.1063/1.2972107
- (2008) Appl. Phys. Lett. , vol.93 , pp. 062111
- Kim, H.-S.¹ Ok, I.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Lee, J.C.⁸ Majhi, P.⁹ Goel, N.¹⁰ Tsai, W.¹¹ Gaspe, C.K.¹² Santos, M.B.¹³

9
- 52949119905
- 0003-6951,. 10.1063/1.2991340
- A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, Appl. Phys. Lett. 0003-6951 93, 122109 (2008). 10.1063/1.2991340
- (2008) Appl. Phys. Lett. , vol.93 , pp. 122109
- Sonnet, A.M.¹ Hinkle, C.L.² Jivani, M.N.³ Chapman, R.A.⁴ Pollack, G.P.⁵ Wallace, R.M.⁶ Vogel, E.M.⁷

10
- 38349175640
- 0003-6951,. 10.1063/1.2829586
- É. O'Connor, R. D. Long, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, B. Brennan, G. Hughes, S. B. Newcomb, and P. K. Hurley, Appl. Phys. Lett. 0003-6951 92, 022902 (2008). 10.1063/1.2829586
- (2008) Appl. Phys. Lett. , vol.92 , pp. 022902
- O'Connor, É.¹ Long, R.D.² Cherkaoui, K.³ Thomas, K.K.⁴ Chalvet, F.⁵ Povey, I.M.⁶ Pemble, M.E.⁷ Brennan, B.⁸ Hughes, G.⁹ Newcomb, S.B.¹⁰ Hurley, P.K.¹¹

11
- 70350724097
- 0951-3248.
- S. B. Newcomb, Inst. Phys. Conf. Ser. 0951-3248 179, 357 (2003).
- (2003) Inst. Phys. Conf. Ser. , vol.179 , pp. 357
- Newcomb, S.B.¹

12
- 55849145159
- 0003-6951,. 10.1063/1.3020298
- M. Kobayashi, P. T. Chen, Y. Sun, N. Goel, P. Majhi, M. Garner, W. Tsai, P. Pianetta, and Y. Nishi, Appl. Phys. Lett. 0003-6951 93, 182103 (2008). 10.1063/1.3020298
- (2008) Appl. Phys. Lett. , vol.93 , pp. 182103
- Kobayashi, M.¹ Chen, P.T.² Sun, Y.³ Goel, N.⁴ Majhi, P.⁵ Garner, M.⁶ Tsai, W.⁷ Pianetta, P.⁸ Nishi, Y.⁹

13
- 39749157907
- GaAs interfacial self-cleaning by atomic layer deposition
- DOI 10.1063/1.2883956
- C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 92, 071901 (2008). 10.1063/1.2883956 (Pubitemid 351304840)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 071901
- Hinkle, C.L.¹ Sonnet, A.M.² Vogel, E.M.³ McDonnell, S.⁴ Hughes, G.J.⁵ Milojevic, M.⁶ Lee, B.⁷ Aguirre-Tostado, F.S.⁸ Choi, K.J.⁹ Kim, H.C.¹⁰ Kim, J.¹¹ Wallace, R.M.¹²

14
- 36048932797
- 2 gate dielectric: Fabrication and characterization
- DOI 10.1063/1.2806190
- D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, and S. K. Banerjee, Appl. Phys. Lett. 0003-6951 91, 193503 (2007). 10.1063/1.2806190 (Pubitemid 350097923)
- (2007) Applied Physics Letters , vol.91 , Issue.19 , pp. 193503
- Shahrjerdi, D.¹ Garcia-Gutierrez, D.I.² Akyol, T.³ Bank, S.R.⁴ Tutuc, E.⁵ Lee, J.C.⁶ Banerjee, S.K.⁷

15
- 45249088756
- 1938-5862.
- L. V. Goncharova, O. Celik, T. Gustafsson, E. Garfunkel, M. Warusawithana, D. G. Schlom, H. Wen, M. B. Santos, S. Sayan, W. Tsai, and N. Goel, ECS Trans. 1938-5862 11, 117 (2007).
- (2007) ECS Trans. , vol.11 , pp. 117
- Goncharova, L.V.¹ Celik, O.² Gustafsson, T.³ Garfunkel, E.⁴ Warusawithana, M.⁵ Schlom, D.G.⁶ Wen, H.⁷ Santos, M.B.⁸ Sayan, S.⁹ Tsai, W.¹⁰ Goel, N.¹¹

16
- 39349086978
- 2S passivated (100) GaAs grown by atomic layer deposition
- DOI 10.1063/1.2838471
- P. T. Chen, Y. Sun, E. Kim, P. C. McIntyre, W. Tsai, M. Garner, P. Pianetta, Y. Nishi, and C. O. Chui, J. Appl. Phys. 0021-8979 103, 034106 (2008). 10.1063/1.2838471 (Pubitemid 351263949)
- (2008) Journal of Applied Physics , vol.103 , Issue.3 , pp. 034106
- Chen, P.T.¹ Sun, Y.² Kim, E.³ McIntyre, P.C.⁴ Tsai, W.⁵ Garner, M.⁶ Pianetta, P.⁷ Nishi, Y.⁸ Chui, C.O.⁹

17
- 0343616153
- (Research Studies Press, Taunton, United Kingdon),.
- K. Heime, InGaAs Field Effect Transistors (Research Studies Press, Taunton, United Kingdon, 1989), p. 46.
- (1989) InGaAs Field Effect Transistors , pp. 46
- Heime, K.¹

18
- 33646895712
- 2/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates
- DOI 10.1063/1.2195370
- E. Pelucchi, N. Moret, B. Dwir, D. Y. Oberli, A. Rudra, N. Gogneau, A. Kumar, E. Kapon, E. Levy, and A. Palevski, J. Appl. Phys. 0021-8979 99, 093515 (2006). 10.1063/1.2195370 (Pubitemid 43781935)
- (2006) Journal of Applied Physics , vol.99 , Issue.9 , pp. 093515
- Pelucchi, E.¹ Moret, N.² Dwir, B.³ Oberli, D.Y.⁴ Rudra, A.⁵ Gogneau, N.⁶ Kumar, A.⁷ Kapon, E.⁸ Levy, E.⁹ Palevski, A.¹⁰

19
- 70350723396
- 0021-9606.
- P. Kruse, J. G. McLean, and A. C. Kummel, J. Chem. Phys. 0021-9606 113, 20 (2000).
- (2000) J. Chem. Phys. , vol.113 , pp. 20
- Kruse, P.¹ McLean, J.G.² Kummel, A.C.³

20
- 62549095943
- 0003-6951,. 10.1063/1.3089688
- É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev, and P. K. Hurley, Appl. Phys. Lett. 0003-6951 94, 102902 (2009). 10.1063/1.3089688
- (2009) Appl. Phys. Lett. , vol.94 , pp. 102902
- O'Connor, É.¹ Monaghan, S.² Long, R.D.³ O'Mahony, A.⁴ Povey, I.M.⁵ Cherkaoui, K.⁶ Pemble, M.E.⁷ Brammertz, G.⁸ Heyns, M.⁹ Newcomb, S.B.¹⁰ Afanas'Ev, V.V.¹¹ Hurley, P.K.¹²

21
- 0000902830
- 0003-6951,. 10.1063/1.118088
- E. Cartier and J. H. Stathis, Appl. Phys. Lett. 0003-6951 69, 103 (1996). 10.1063/1.118088
- (1996) Appl. Phys. Lett. , vol.69 , pp. 103
- Cartier, E.¹ Stathis, J.H.²

22
- 0035310067
- 0021-8979,. 10.1063/1.1343897
- B. J. O'Sullivan, P. K. Hurley, C. Leveugle, and J. H. Das, J. Appl. Phys. 0021-8979 89, 3811 (2001). 10.1063/1.1343897
- (2001) J. Appl. Phys. , vol.89 , pp. 3811
- O'Sullivan, B.J.¹ Hurley, P.K.² Leveugle, C.³ Das, J.H.⁴

23
- 37549015601
- 0013-4651,. 10.1149/1.2806172
- P. K. Hurley, K. Cherkaoui, E. O'Connor, M. C. Lemme, H. D. B. Gottlob, M. Schmidt, S. Hall, Y. Lu, O. Buiu, B. Raeissi, J. Piscator, O. Engstrom, and S. B. Newcomb, J. Electrochem. Soc. 0013-4651 155, G13 (2008). 10.1149/1.2806172
- (2008) J. Electrochem. Soc. , vol.155 , pp. 13
- Hurley, P.K.¹ Cherkaoui, K.² O'Connor, E.³ Lemme, M.C.⁴ Gottlob, H.D.B.⁵ Schmidt, M.⁶ Hall, S.⁷ Lu, Y.⁸ Buiu, O.⁹ Raeissi, B.¹⁰ Piscator, J.¹¹ Engstrom, O.¹² Newcomb, S.B.¹³

24
- 0004277486
- (Wiley, New York), Cha.
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), Chap.
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

25
- 0037320050
- 0268-1242,. 10.1088/0268-1242/18/2/303
- K. S. K. Kwa, S. Chattopadhyay, N. D. Jankovic, S. H. Olsen, L. S. Driscoll, and A. G. O'Neill, Semicond. Sci. Technol. 0268-1242 18, 82 (2003). 10.1088/0268-1242/18/2/303
- (2003) Semicond. Sci. Technol. , vol.18 , pp. 82
- Kwa, K.S.K.¹ Chattopadhyay, S.² Jankovic, N.D.³ Olsen, S.H.⁴ Driscoll, L.S.⁵ O'Neill, A.G.⁶

26
- 39749167824
- On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
- DOI 10.1109/TED.2007.912365
- K. Martens, C. O. Chui, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Groeseneken, IEEE Trans. Electron Devices 0018-9383 55, 547 (2008). 10.1109/TED.2007.912365 (Pubitemid 351297540)
- (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.2 , pp. 547-556
- Martens, K.¹ Chui, C.O.² Brammertz, G.³ De Jaeger, B.⁴ Kuzum, D.⁵ Meuris, M.⁶ Heyns, M.M.⁷ Krishnamohan, T.⁸ Saraswat, K.⁹ Maes, H.E.¹⁰ Groeseneken, G.¹¹

27
- 34548412615
- High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric
- DOI 10.1063/1.2776846
- N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D. G. Schlom, M. B. Santos, J. S. Harris, and Y. Nishi, Appl. Phys. Lett. 0003-6951 91, 093509 (2007). 10.1063/1.2776846 (Pubitemid 47352372)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 093509
- Goel, N.¹ Majhi, P.² Tsai, W.³ Warusawithana, M.⁴ Schlom, D.G.⁵ Santos, M.B.⁶ Harris, J.S.⁷ Nishi, Y.⁸

28
- 70350725864
- Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
- 1938-5862 ().
- P. K. Hurley, É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, J. MacHale, A. J. Quinn, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev, A. M. Sonnet, R. V. Galatage, M. N. Jivani, E. M. Vogel, R. M. Wallace, and M. E. Pemble, " Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53).," ECS Trans. 1938-5862 25 (6), 113 (2009).
- (2009) ECS Trans. , vol.25 , Issue.6 , pp. 113
- Hurley, P.K.¹ O'Connor, É.² Monaghan, S.³ Long, R.D.⁴ O'Mahony, A.⁵ Povey, I.M.⁶ Cherkaoui, K.⁷ MacHale, J.⁸ Quinn, A.J.⁹ Brammertz, G.¹⁰ Heyns, M.¹¹ Newcomb, S.B.¹² Afanas'Ev, V.V.¹³ Sonnet, A.M.¹⁴ Galatage, R.V.¹⁵ Jivani, M.N.¹⁶ Vogel, E.M.¹⁷ Wallace, R.M.¹⁸ Pemble, M.E.¹⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.