Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 685-689

  Wadsworth, H J ^a   Bhattacharya, S ^a   McNeill, D W ^a   Ruddell, F H ^a   Armstrong, B M ^a   Gamble, H S ^a   Denvir, D ^b  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^b OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

Atomic layer deposition (ALD); Germanium MOS capacitors; Hafnium dioxide; High k dielectric

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); PHOTODETECTORS; SEMICONDUCTING GERMANIUM; SILICA; SUBSTRATES;

ATOMIC LAYER DEPOSITION (ALD); GERMANIUM MOS CAPACITORS; HAFNIUM DIOXIDE; HIGH K DIELECTRICS;

MOS CAPACITORS;

EID: 33845338480     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.052     Document Type: Article

References (3)

1. Sedgewick T.O. J Appl Phys 39 11 (1968) 5066
2. Le Royer C., et al. Proc ESSDERC (2005) 97-100
3. Wu N., et al. Appl Phys Lett 84 19 (2004) 3741