Equivalent oxide thickness correction in the high-k/In 0.53Ga0.47As/InP system

ECS Transactions

Volumn 33, Issue 3, 2010, Pages 433-444

  Hurley, P K ^a   Long, R D ^a   O'Regan, T ^a   O'Connor, E ^a   Monaghan, S ^a   Djara, V ^a   Negara, M A ^a   O'Mahony, A ^a   Povey, I M ^a   Blake, A ^a   Nagle, R E ^a   O'Connell, D ^a   Pemble, M E ^a   Cherkaoui, K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; ISOMERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

CAPACITANCE VOLTAGE CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; HIGH- K; IDEAL SYSTEMS; IN0.53GA0.47AS; MOS STRUCTURE; THEORETICAL CALCULATIONS; THEORETICAL INVESTIGATIONS;

CAPACITANCE;

EID: 79551667657     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3481632     Document Type: Conference Paper

References (21)

1. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C.-H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J.Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J.Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P.Ranade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, and K. Zawadzki, Tech. Dig. - Int. Electron Devices Meet. P. 247 (2007)
2. Uttam Singisetti, Jeramy D. Zimmerman, Mark A. Wistey, Joël Cagnon, Brian J. Thibeault, Mark J. W. Rodwell, Arthur C. Gossard,Susanne Stemmer, and Seth R. Bank, Appl. Phys. Lett., 94, 083505 (2009)
3. É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev, and P. K. Hurley, Appl. Phys. Lett. 94, 102902 (2009)
4. G. Brammertz, H. C. Lin, K. Martens, D. Mercier, C. Merckling, J. Penaud, C.Adelmann,, S. Sioncke, W. E. Wang, M. Caymax, M. Meuris and M. Heyns, Journal of The Electrochemical Society, 155(12) H945-H950 (2008)
5. I.G. Thayne, R.J.W. Hill, M.C. Holland, X. Li, H.Zhou, D.S. Macintyre, S. Thorns, K. Kalna, C.R. Stanley, A. Asenov, R.Droopad, and M. Passlack, ECS Transactions, 19 (5) 275-286 (2009)
6. M.V. Fischetti and S. E. Laux, IEEE Trans. on Elec. Dev., 38. No. 3, 650 (1991)
7. Q. Rafhay, R. Clerc, M. Ferner, G. Pananakakis, G. Ghibaudo Solid State Electronics, Vol 52, 540, (2008).
8. T. P. O'Regan, P. K. Hurley, B. Sorée, and M. V. Fischetti, Appl. Phys. Lett. 96, 213514(2010).
9. V. Mosser et al, Semiconductor Sci. and Technol., 3, 808 (1988)
10. G. Brammertz, H.-C. Lin, M. Caymax, M. Meuris, M. Heyns and M. Passlack, Appl. Phys. Lett. 95, 202109 (2009)
11. www.nd.edu/~gsnider/
12. Parameters taken from: www.ioffe.ru/SVA/NSM/
13. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl.Phys. 89, 5815 (2001).
14. th March 2010.
15. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 92, 071901 (2008)
16. M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. 86, 152904 (2005)
17. B. Brennan, M. Milojevic, H. C. Kim, P. K. Hurley, J. Kim, G. Hughes, and R. M. Wallace, Electrochem. Solid-State Lett. 12 H205 (2009)
18. É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev, and P. K. Hurley, Appl. Phys. Lett. 94, 102902 (2009)
19. P. K. Hurley, É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, J. MacHale, A.J. Quinn, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev,, A. M. Sonnet, R. V. Galatage, M. N. Jivani, E. M. Vogel, R. M. Wallace and M. E. Pemble, ECS Transactions, 25 (6) 113-127 (2009)
20. G. Brammertz, H.C. Lin, K. Martens, A. Alian, C. Merckling, J. Penaud, D. Kohen, W.-E Wang, S. Sioncke, A. Delabie, M. Meuris, M. Caymax, M. Heyns. ECS Transactions, 19 (5) 375-386 (2009)
21. C.L. Hinkle, A. M. Sonnet, R. A. Chapman and E.M. Vogel, IEEE Trans. on Elec. Dev., 30,316, (2009).