Exploring the ALD Al2O3/ In0.53Ga 0.47As and Al2O3/Ge interface properties: A common gate stack approach for advanced III-V/Ge CMOS

ECS Transactions

Volumn 28, Issue 5, 2010, Pages 173-183

  Lin, D ^a   Waldron, N ^a   Brammertz, G ^a   Martens, K ^a   Wang, W E ^a   Sioncke, S ^a   Delabie, A ^a   Bender, H ^a   Conard, T ^a   Tseng, W H ^b   Lin, J C ^b   Temst, K ^c   Vantomme, A ^c   Mitard, J ^a   Caymax, M ^a   Meuris, M ^a   Heyns, M ^a,c   Hoffmann, T ^a  

^a IMEC   (Belgium)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM ALLOYS; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CMOS INTEGRATED CIRCUITS; GALLIUM ALLOYS; GATE DIELECTRICS; GERMANIUM OXIDES; INDIUM ALLOYS; INTERFACE STATES; LOGIC GATES; OXIDE SEMICONDUCTORS; PASSIVATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR ALLOYS; SUBSTRATES;

CONCEPT-BASED; GE SUBSTRATES; IN0.53GA0.47AS; INTERFACE PROPERTY; INTERFACIAL PASSIVATION LAYERS; NATIVE OXIDES; OXIDE-SEMICONDUCTOR INTERFACES; STATE DISTRIBUTIONS;

MOSFET DEVICES;

EID: 78650452962     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3367949     Document Type: Conference Paper

References (10)

1. M. Schulz, Surf. Sci., 132, 422 (1983).
2. C.W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces, p. 213, Plenum Press, New York (1985).
3. G. Brammertz, K. Martens, S. Sioncke, A. Delabie, M. Caymax, M. Meuris, and M. Heyns, Appl. Phys. Lett. 91, 133510 (2007).
4. K. Martens, C. O. Chui, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes and G. Groeseneken, IEEE Trans. Electr. Devices, 55 (2), 547 (2008).
5. G. Brammertz, H.C. Lin, K. Martens, D. Mercier, C. Merckling, J. Penaud, C. Adelmann, S. Sioncke, W.E. Wang, M. Caymax, M. Meuris and M. Heyns, Journal of the Electrochemical Society 155 (12), H945 (2008).
6. G. Brammertz, D. Lin, K. Martens, D. Mercier, S. Sioncke, A. Delabie, W. Wang, M. Caymax, M. Meuris and M. Heyns, Appl. Phys. Lett. 93, 183504 (2008).
7. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, p. 215-216, Wiley, New York (1981).
8. D. Lin, G. Brammertz, K. Martens, G. de Valicourt, L. Negre, W. E. Wang, W. Tsai, M. Meuris and M. Heyns, Appl. Phys. Lett. 94, 153508 (2009).
9. J. Lin, S. Lee, H. J. Oh, W. Yang, G. Q. Lo, D. L. Kwong and D. Z. Chi, International Electron Device Meeting Tech. Digest, p.401 (2008).
10. Y. Nakakita, R. Nakane, T. Sasada, H. Matsubara, M. Takenaka and S. Takagi, International Electron Device Meeting Tech. Digest, p.877 (2008).