SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

Characterization of traps in the transition region at the HfO 2/SiOx interface by thermally stimulated currents

(4) Raeissi, B a,b Piscator, J a Chen, Y Y a,c Engstrom O a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b UNIVERSITY OF OSLO (Norway)

c NONE (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP; GRADUAL TRANSITION; INTERFACE REGIONS; INTERFACE STATE; SILICON CRYSTAL; SILICON ENERGY; TEM; THERMAL PROCESS; THERMALLY STIMULATED CURRENT; TRANSITION REGIONS;

HAFNIUM; HAFNIUM COMPOUNDS; SILICON OXIDES; THERMOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551588546 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3530845 Document Type: Article

Times cited : (9)

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