Three-dimensional imaging of individual hafnium atoms inside a semiconductor device

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  Van Benthem, Klaus ^a   Lupini, Andrew R ^a   Kim, Miyoung ^b,e   Baik, Hion Suck ^b   Doh, Seokjoo ^c   Lee, Jong Ho ^c   Oxley, Mark P ^d   Findlay, Scott D ^d   Allen, Leslie J ^d   Luck, Julia T ^a   Pennycook, Stephen J ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d UNIVERSITY OF MELBOURNE   (Australia)

^e Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH RESOLUTION; DIELECTRIC STACK; GATE DIELECTRICS;

ABERRATIONS; HAFNIUM; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SENSITIVITY ANALYSIS; SILICON COMPOUNDS;

IMAGING TECHNIQUES;

EID: 24144449562     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1991989     Document Type: Article

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