Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2179-2186

  Lucovsky, G ^a   Yang, H ^a   Niimi, H ^a   Thorpe, M F ^b   Phillips, J C ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b MICHIGAN STATE UNIVERSITY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044522981     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. G. Lucovsky, S. S. Kim, D. V. Tsu, G. G. Fountain, and R. J. Markunas, J. Vac. Sci. Technol. B 7, 861 (1989).
2. S. S. Kim and G. Lucovsky, J. Vac. Sci. Technol. A 8, 2039 (1990).
3. T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovsky, Appl. Phys. Lett. 60, 434 (1992).
4. S. V. Hattangady, H. Niimi, and G. Lucovsky, J. Vac. Sci. Technol. A 14, 3017 (1996).
5. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Phillips, Appl. Phys. Lett. 74, 2005 (1999).
6. V. Misra, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. J. Wortman, and J. R. Hauser, J. Vac. Sci. Technol. B 17, 1836 (1999).
7. G. Lucovsky, J. J. Wortman, T. Yasuda, X.-L. Xu, V. Misra, S. V. Hattangady, Y. Ma, and B. Hornung, J. Vac. Sci. Technol. B 12, 2839 (1994).
8. G. Lucovsky, IBM J. Res. Dev. 43, 301 (1999), and references therein.
9. H. Niimi, H. Y. Yang, and G. Lucovsky, in Characterization and Metrology for ULSI Technology: 1998 International Conference, edited by D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters (AIP, Woodbury, NY, 1998), p. 273.
10. G. B. Rayner, R. Therrien, and G. Lucovsky (unpublished).
11. P. K. Roy and I. C. Kizikyalli, Appl. Phys. Lett. 72, 2835 (1998);
12. I. C. Kizikyalli, R. Y. S. Huang, and P. K. Roy, IEEE Electron Device Lett. 19, 423 (1998).