Multiparameter admittance spectroscopy as a diagnostic tool for interface states at oxide/semiconductor interfaces

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1702-1705

  Raeissi, Bahman ^a   Piscator, Johan ^a   Engstrom, Olof ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Admittance; conductance method; high k material; interface states; metal oxide semiconductor (MOS)

Indexed keywords

ADMITTANCE SPECTROSCOPIES; APPLIED VOLTAGES; BEFORE AND AFTER; CONDUCTANCE METHOD; CONTOUR PLOT; DIAGNOSTIC TOOLS; HIGH-K MATERIALS; INTERFACE STATE; MEASURED DATA; METAL OXIDE SEMICONDUCTOR; MULTIPARAMETERS; OXIDE/SEMICONDUCTOR INTERFACES; POST-METALLIZATION ANNEALING; SIGNAL FREQUENCIES;

ALGEBRA; DIELECTRIC DEVICES; ELECTRIC ADMITTANCE; SILICON COMPOUNDS;

DIAGNOSTIC PRODUCTS;

EID: 77954032054     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049064     Document Type: Article

References (15)

1. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. Hoboken, NJ: Wiley, 2003.
2. J. Piscator, B. Raeissi, and O. Engström, "The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces," Appl. Phys. Lett., vol.94, no.21, pp. 213 507-1-213 507-3, May 2009.
3. J. Piscator, B. Raeissi, and O. Engström, "Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems," J. Appl. Phys., vol.106, no.5, pp. 054 510-1-054 510-11, Sep. 2009.
4. 3 high-k/metal-gate structures on silicon," J. Electrochem. Soc., vol.155, no.2, pp. G13-G20, Dec. 2008.
5. O. Engström, B. Raeissi, and J. Piscator, "Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy," J. Appl. Phys., vol.103, no.10, pp. 104 101-104 106, May 2008.
6. B. Raeissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H. J. Osten, "High-koxide/ silicon interfaces characterized by capacitance frequency spectroscopy," Solid State Electron., vol.52, no.9, pp. 1274-1279, Sep. 2008.
7. C. H. Henry and D. V. Lang, "Nonradiative capture and recombination by multiphonon emission in GaAs and GaP," Phys. Rev. B, Condens. Matter, vol.15, no.2, pp. 989-1016, Jan. 1977.
8. M. Lax, "Cascade capture of electrons in solids," Phys. Rev., vol.119, no.5, pp. 1502-1523, Sep. 1960.
9. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, "Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers," J. Appl. Phys., vol.52, no.2, pp. 879-884, Feb. 1981.
10. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, "Interface traps and Pb centers in oxidized (100) silicon wafers," Appl. Phys. Lett., vol.49, no.6, pp. 348-350, Aug. 1986.
11. E. H. Poindexter, "MOS interface states: Overview and physicochemical perspective," Semicond. Sci. Technol., vol.4, no.12, pp. 961-969, Dec. 1989.
12. 2 interface from electrical measurements," Appl. Phys. Lett., vol.59, no.26, pp. 3416-3418, Dec. 1991.
13. 2 interface-electrical properties as determined by the metal-insulator-silicon conductance technique," Bell Syst. Tech. J., vol.46, pp. 1055-1133, Jul. 1967.
14. 2 interface using the conductance technique," Appl. Phys. Lett., vol.60, no.5, pp. 624-626, Feb. 1992.
15. 2 interface," J. Appl. Phys., vol.80, no.7, pp. 3915-3922, Oct. 1996.