Interface states and Pb defects at the Si(100)/HfO2 interface

Electrochemical and Solid-State Letters

Volumn 8, Issue 2, 2005, Pages

  Hurley, P K ^a   O'Sullivan, B J ^a   Afanas'ev, V V ^b   Stesmans, A ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOSFET DEVICES; PARAMAGNETIC RESONANCE; PHOTODISSOCIATION; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); ELECTRIC LEAKAGE; FREQUENCY DEPENDENT IMPEDANCE ANALYSIS; FULL ENERGY GAP;

DEFECTS;

EID: 13444280011     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1846716     Document Type: Article

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