Electron traps at Hf2/SiOx interfaces

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 130-133

  Raeissi, B ^a   Chen, Y Y ^a   Piscator, J ^a   Lai, Z H ^a   Engstrom O ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON TRAPS; HAFNIUM; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

ENERGY BANDS; FIELD DISTRIBUTIONS; GATE STACKS; HIGH CONCENTRATIONS; INTER-LAYERS; INTERFACE REGIONS; INTERFACE STATES; SILICON CRYSTALS; TWO DOMAINS;

SILICON COMPOUNDS;

EID: 84924995706     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681716     Document Type: Conference Paper

References (7)

1. J. Robertson, "High dielectric constant oxides", Eur. J. Appl. Phys. Vol. 28, 265 (2004)
2. 2 gate dielectric stacks", Appl. Phys. Lett. Vol. 80, 1975 (2002)
3. J. L. Gavartin, A. L. Shluger, A. S. Foster, G. I. Bersuker, "The role of nitrogen related defects in high-k dielectric oxides: Density functional studies", J. Appl. Phys. Vol. 97, 053704 (2005)
4. 2 gate stacks", J. Appl. Phys. Vol. 100, 024103 (2006)
5. B. Raeissi, J. Piscator, O Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K: Hurley, K. Cherkaoui, H. J. Osten, "High-k oxide/silicon interfaces characterized by capacitance frequency spectroscopy", Proc. ESSDERC 2007, p. 283 and accepted for publ. in Solid State Electronics, 2008
6. O. Engström, B. Raeissi, J. Piscator, "Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy", accepted for publ. in J. Appl. Phys., 2008
7. M. Johansson, "Silicon device substrate and channel characteristics influenced by interface properties", Thesis, Chalmers University of Technology MC2-43, ISSN1652-0769 (2005)