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Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

(3) Piscator, J a Raeissi, B a Engstrom O a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM UP APPROACH; CAPTURE CROSS SECTIONS; CONDUCTANCE METHOD; CONDUCTION BAND EDGE; DIFFERENTIAL CONDUCTANCES; ELECTRON STATE; ENERGY DEPENDENCE; ENERGY DEPENDENT; HIGH-K DIELECTRIC; INTERFACE STATE; MULTIPHONON MECHANISMS; STATISTICAL PROPERTIES; THERMAL EMISSION RATE;

ELECTRON MOBILITY; HAFNIUM COMPOUNDS;

HAFNIUM;

EID: 66549126074 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3138125 Document Type: Article

Times cited : (14)

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