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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

(3) Piscator, J a Raeissi, B a Engstrom O a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPIES; ANALYTICAL SOLUTIONS; CONDUCTANCE DISPERSION; CONDUCTANCE METHOD; ENERGY DEPENDENT; EXPERIMENTAL DATA; GATE VOLTAGES; INTERFACE STATE DENSITY; LATERAL SURFACE; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR STRUCTURES; MULTIPARAMETERS; NUMERICAL INTEGRATIONS; POTENTIAL VARIATIONS; SEMICONDUCTOR INTERFACES; THEORETICAL CALCULATIONS;

DIELECTRIC DEVICES; SMELTING;

ELECTRIC ADMITTANCE;

EID: 70349317370 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3213384 Document Type: Article

Times cited : (21)

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