Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures

Thin Solid Films

Volumn 486, Issue 1-2, 2005, Pages 200-204

  Lucovsky, G ^a   Phillips, J C ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Bond constraint theory; Interfacial defects and defect precursors; Interfacial transition regions; Internal dielectric interfaces; Self organization

Indexed keywords

CONSTRAINT THEORY; DEFECTS; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; GLASS TRANSITION; INTERFACES (MATERIALS); MOS DEVICES; OXIDES; RARE EARTH ELEMENTS; SEMICONDUCTING SILICON; STRAIN; TRANSITION METALS;

BOND CONSTRAINT THEORY (BCT); INTERFACIAL DEFECTS AND DEFECT PRECURSORS; INTERFACIAL TRANSITION REGIONS; INTERNAL DIELECTRIC INTERFACES; SELF-ORGANIZATION;

RELAXATION PROCESSES;

EID: 21844439229     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.224     Document Type: Conference Paper

References (21)

1. G. Lucovsky, and J.C. Phillips J. Vac. Sci. Technol., B 22 2004 2087
2. G. Lucovsky, J.P. Maria, and J.C. Phillips J. Vac. Sci. Technol., B 22 2004 2097
3. J.C. Phillips J. Non-Cryst. Solids 34 1979 153
4. J.C. Phillips J. Non-Cryst. Solids 43 1981 37
5. G. Lucovsky, H. Yang, H. Niimi, J.W. Keister, J.E. Rowe, M.F. Thorpe, and J.C. Phillips J. Vac. Sci. Technol., B 18 2000 1742
6. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J.C. Phillips Appl. Phys. Lett. 74 1999 2005
7. P. Boolchand P. Boolchand Insulating and semiconducting glasses 2000 World Scientific Singapore 191
8. P. Boolchand, D.G. Georgiev, and M. Micoulaut J. Optoelectron. Adv. Mater. 4 2002 823
9. J.T. Fitch, C.H. Bjorkman, G. Lucovsky, F.H. Pollak, and X. Yim J. Vac. Sci. Technol., B 7 1988 775
10. F.T. Himpsel, F.R. McFeely, J.A. Yarmoff, and G. Hollinger Phys. Rev., B 38 1988 6084
11. J.W. Keister, J.E. Rowe, J.J. Kolodziej, H. Niimi, H.S. Tao, T.E. Madey, and G. Lucovsky J. Vac. Sci. Technol., A, Vac. Surf. Films 17 1999 1250
12. J. Schafer, A.P. Young, L.J. Brillson, H. Niimi, and G. Lucovsky Appl. Phys. Lett. 73 1998 791
13. B.J. Hinds, F. Wang, D.M. Wolfe, C.L. Hinkle, and G. Lucovsky J. Vac. Sci. Technol., B 16 1998 2171
14. R. Carius, R. Fischer, F. Holzenkampfer, and J. Stuke J. Appl. Phys. 52 1981 4241
15. J.R. Hauser IEEE Trans. Electron Devices 43 1996 1981
16. J.P. Maria, D. Wichakana, J. Parrete, and A.I. Kingon J. Mater. Res. 17 2002 1571
17. G.B. Rayner, D. Kang, and G. Lucovsky J. Vac. Sci. Technol., B 21 2003 1783
18. International Technology Roadmap for Semiconductors, 2001 ed., at http://public.itrs.net.
19. C.L. Hinkle, and G. Lucovsky Appl. Surf. Sci. 216 2003 124
20. G. Lucovsky J. Vac. Sci. Technol., B 22 2004 2132
21. J.C. Lee, and K. Onishi M. Houssa High-k gate dielectrics 2004 Inst. of Phys. London 560