Investigation of voltage-swing effect and trap generation in high-k gate dielectric of MOS devices by charge-pumping measurement

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 20-26

  Lu, Chun Yuan ^a   Chang Liao, Kuei Shu ^a   Lu, Chun Chang ^a   Tsai, Ping Hung ^a   Kyi, Yin Yin ^a   Wang, Tien Ko ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Charge pumping; Gate dielectric; High k; MOS devices

Indexed keywords

CHARGE CARRIERS; ELECTRIC POTENTIAL; MOS DEVICES; VOLTAGE MEASUREMENT;

CARRIER TUNNELING; CHARGE PUMPING MEASUREMENT; CONSTANT VOLTAGE STRESS (CVS); TRAP MIGRATION;

GATE DIELECTRICS;

EID: 36148999427     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.02.012     Document Type: Article

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