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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 249-252

Gd silicate: A high-k dielectric compatible with high temperature annealing

(15) Gottlob, H D B a Stefani, A a Schmidt, M a Lemme, M C a Kurz, H a Mitrovic, I Z b Werner, M b Davey, W M b Hall, S b Chalker, P R b Cherkaoui, K c Hurley, P K c Piscator, J d Engstrom O d Newcomb, S B e

a AMO GMBH (Germany)

b UNIVERSITY OF LIVERPOOL (United Kingdom)

c UNIVERSITY COLLEGE CORK (Ireland)

d CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

e Glebe Scientific Ltd (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHARGE COUPLED DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GADOLINIUM; GATE DIELECTRICS; METAL ANALYSIS; METALLIC COMPOUNDS; MOS DEVICES; OZONE WATER TREATMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICA; SILICATES; SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

COMPLEMENTARY METAL-OXIDE SEMICONDUCTORS; GADOLINIUM OXIDES; GATE FIRSTS; HIGH - K DIELECTRICS; HIGH-TEMPERATURE ANNEALING; MEDIUM-ENERGY ION SCATTERINGS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; SILICON SUBSTRATES; STRUCTURAL CHANGES; TRANSMISSION ELECTRONS;

AMORPHOUS SILICON;

EID: 59949100650 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3025904 Document Type: Article

Times cited : (18)

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