Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Engstrom O ^a   Raeissi, B ^a   Piscator, J ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MULTIPHOTON PROCESSES; NATURAL FREQUENCIES; REACTIVE SPUTTERING; SILICON; SPECTROSCOPIC ANALYSIS;

CAPACITANCE FREQUENCY SPECTROSCOPY; HAFNIUM OXIDE;

HAFNIUM COMPOUNDS;

EID: 44649187867     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2921795     Document Type: Article

References (26)

1. W. Fahrner and A. Goetzberger, Appl. Phys. Lett. 0003-6951 10.1063/1.1653234 17, 16 (1970).
2. H. Deuling, E. Klausmann, and A. Goetzberger, Solid-State Electron. 0038-1101 10.1016/0038-1101(72)90157-8 15, 559 (1972).
3. M. Morita, K. Tsubouchi, and N. Mikoshiba, Appl. Phys. Lett. 0003-6951 10.1063/1.90525 33, 745 (1978).
4. W. D. Eades and R. M. Swanson, Appl. Phys. Lett. 0003-6951 10.1063/1.94622 44, 988 (1984).
5. N. Haneji, L. Vishnubhotla, and T. P. Ma, Appl. Phys. Lett. 0003-6951 10.1063/1.105693 59, 3416 (1991).
6. M. J. Uren, V. Nayar, K. M. Brunson, C. J. Anthony, J. H. Stathis, and E. Cartier, J. Electrochem. Soc. 145, 683 (1998).
7. J. Albohn, W. Füssel, N. D. Sinh, K. Kliefoth, and W. Fuhs, J. Appl. Phys. 0021-8979 10.1063/1.373746 88, 842 (2000).
8. O. Engström, T. Gutt, and H. M. Przewlocki, J. Telecommunications Inf. Tech. 2, 86 (2007).
9. O. Engström and H. G. Grimmeiss, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/4/12/012 4, 1106 (1989).
10. A. Ricksand and O. Engström, J. Appl. Phys. 0021-8979 10.1063/1.349818 70, 6927 (1991).
11. M. O. Andersson and O. Engström, Appl. Surf. Sci. 39, 289 (1989). 0169-4332
12. C. T. Sah, L. Forbes, L. L. Rosier, and A. F. Tasch, Solid-State Electron. 0038-1101 10.1016/0038-1101(70)90064-X 13, 759 (1970).
13. O. Engström and A. Alm, J. Appl. Phys. 0021-8979 10.1063/1.332751 54, 5240 (1983).
14. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
15. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977).
16. J. A. Van Vechten and C. D. Thurmond, Phys. Rev. B 14, 3539 (1976).
17. J. Robertson, Eur. J. Appl. Physiol. 28, 265 (2004). 1439-6319
18. B. Raeissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H. J. Osten, Solid-State Electron. (accepted).
19. O. Engström, A. Eghtedari, and M. Kaniewska, Mater. Sci. Eng., C 27, 936 (2007).
20. P. Masson, J. -L. Autran, M. Houssa, X. Garros, and C. Leroux, Appl. Phys. Lett. 0003-6951 10.1063/1.1518561 81, 3392 (2002).
21. G. A. Apostolopoulous, G. Vellianitis, A. Dimoulas, J. C. Hooker, and T. Conard, Appl. Phys. Lett. 0003-6951 10.1063/1.1639942 84, 260 (2004).
22. Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans Z. Zhang, and A. A. Campbell, J. Appl. Phys. 0021-8979 10.1063/1.2140871 98, 123703 (2005).
23. A. Stesmans and A. A. Afanasev, J. Appl. Phys. 0021-8979 10.1063/1.1818718 97, 033510 (2005).
24. P. K. Hurley, B. J. Sullivan, V. V. Afanasev, and A. Stesmans, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.1846716 8, G44 (2005).
25. V. Heine and J. A. Van Vechten, Phys. Rev. B 13, 1622 (1976).
26. P. T. Landsberg and O. Engström, Handbook of Semiconductors (Elsevier, New York, 1992), p. 197.