Nanowire to single-electron transistor transition in trigate SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 26-32

  Akhavan, Nima Dehdashti ^a   Afzalian, Aryan ^a,b   Lee, Chi Woo ^a   Yan, Ran ^a   Ferain, Isabelle ^a   Razavi, Pedram ^a   Yu, Ran ^a   Fagas, Giorgos ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

3 D device modeling; low temperature; low dimensional structures; quantum transport; silicon nanowire transistor; tunnel barrier field effect transistor (FET)

Indexed keywords

DEVICE MODELING; LOW TEMPERATURES; LOW-DIMENSIONAL STRUCTURES; QUANTUM TRANSPORT; SILICON NANOWIRE TRANSISTOR;

ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; THREE DIMENSIONAL;

SINGLE ELECTRON TRANSISTORS;

EID: 78650921901     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2084390     Document Type: Article

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