Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Nanotechnology

Volumn 20, Issue 6, 2009, Pages

  Lee, W ^a   Su, P ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COULOMB BLOCKADE OSCILLATIONS; FIN WIDTHS; GATE BIAS; GATE CONTROLS; GATE LENGTHS; LOW-POWER CMOS CIRCUITS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; MULTIPLE GATES; ROOM TEMPERATURES; SILICON ON INSULATORS; SINGLE-ELECTRON EFFECTS; SINGLE-ELECTRON TRANSISTORS; SOI-MOSFETS; SOURCE/DRAIN RESISTANCES; SOURCE/DRAIN STRUCTURES; TUNNEL BARRIERS; ULTRA HIGHS;

COULOMB BLOCKADE; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRONS; FIELD EFFECT TRANSISTORS; ION BEAMS; MICROSENSORS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; TRANSIENTS;

SEMICONDUCTING SILICON COMPOUNDS;

METAL OXIDE; SILICON;

ARTICLE; CONDUCTANCE; COULOMB BLOCKADE OSCILLATION; ELECTRON; FIN WIDTH; GEOMETRY; METAL OXIDE SEMICONDUCTOR FIELD TRANSISTOR; NANOTECHNOLOGY; OSCILLATION; PARAMETER; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; SINGLE ELECTRON EFFECT;

EID: 65249088989     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/6/065202     Document Type: Article

References (24)

1. Likharev K K 1999 Single-electron devices and their applications Proc. IEEE 87 606-32
2. Goodnick S M and Bird J 2003 Quantum-effect and single-electron devices IEEE Trans. Nanotechnol. 2 368-85
3. Miyaji K, Saitoh M and Hiramoto T 2003 Compact analytical model for room-temperature-operating silicon single-electron transistors with discrete quantum energy levels IEEE Trans. Nanotechnol. 5 167-73 (Pubitemid 43751490)
4. Lent C S, Tougaw P D, Porod W and Bernstein G H 1993 Quantum cellular automata Nanotechnology 4 49-57
5. Nielsen M A and Chuang I L 2000 Quantum Computation and Quantum Information (Cambridge: Cambridge University)
6. Uchida K, Koga J, Ohba R and Toriumi A 2000 Room-temperature operation of multifunctional single-electron transistor logic IEEE Int. Electron Devices Meeting Tech. Dig. pp863-5
7. Beenakker C W J 1991 Theory of Coulomb-blockade oscillations in the conductance of a quantum dot Phys. Rev. B 44 1646-56
8. Boeuf F, Jehl X, Sanquer M and Skotnicki T 2003 Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors IEEE Trans. Nanotechnol. 2 144-8
9. Jehl X, Sanquer M, Bertrand G, Guégan G, Deleonibus S and Fraboulet D 2003 Silicon single electron transistors with SOI and MOSFET structures: the role of access resistances IEEE Trans. Nanotechnol. 2 308-13
10. Krivokapic Z, Tabery C, Maszara W, Xiang Q and Lin M-R 2003 High performance 45 nm CMOS technology with 20 nm multi-gate devices 2003 Int. Conf. on Solid State Devices Materials pp760-1
11. Lee W, Su P, Chen H-Y, Chang C-Y, Su K-W, Liu S and Yang F-L 2006 An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6 gate oxide near room temperature IEEE Electron Device Lett. 27 182-4 (Pubitemid 43316716)
12. Wan Y-M, Huang K-D, Sung C-L and Hu S-F 2005 Transport properties of ultra thin oxide gated Si SET near room temperature Proc. 5th IEEE Conf. on Nanotechnology vol 2 pp750-3 (Pubitemid 43869523)
13. Yang F-L, Chen H-Y, Chen F-C, Chan Y-L, Yang K-N, Chen C-J, Tao H-J, Choi Y-K, Liang M-S and Hu C 2002 35 CMOS FinFETs Symp. VLSI Tech. Dig. pp104-5
14. Zhuang L, Guo L and Chou S Y 1998 Silicon single-electron quantum-dot transistor switch operating at room temperature Appl. Phys. Lett. 72 1205-7 (Pubitemid 128677843)
15. KEITHLEY 2005 Overcoming the Measurement Challenges of Advanced Semiconductor Technologies-DC, Pluse, and RF-From Modeling to Manufacturing 1st edn (Ohio, USA: Keithley) p102
16. Scott-Thomas J H P, Field S B, Kastner M A, Smith H I and Antoniadis D A 1989 Conductance oscillations periodic in the density of a one-dimensional electron gas Phys. Rev. Lett. 62 583-6
17. Simmel F, Abusch-Magder D, Wharam D A, Kastner M A and Kotthaus J P 1999 Statistics of the Coulomb-blockade peak spacings of a silicon quantum dot Phys. Rev. B 59 10441-4
18. Vallejos R O, Lewenkopf C H and Mucciolo E R 1998 Coulomb blockade peak spacing fluctuations in deformable quantum dots: a further test of random matrix theory Phys. Rev. Lett. 81 677-80 (Pubitemid 128628341)
19. Berkovits R 1998 Absence of bimodal peak spacing distribution in the Coulomb blockade regime Phys. Rev. Lett. 81 2128-31 (Pubitemid 128623087)
20. Peters M G, den Hartog S G, Dijkhuis J I, Buyk O J A and Molenkamp L W 1998 Single electron tunneling and suppression of short-channel effects in submicron silicon transistors J. Appl. Phys. 84 5052-6 (Pubitemid 128559603)
21. Sohn L L, Kouwenhoven L P and Schön G 1997 Mesoscopic electron transport NATO Science Series E: Appl. Sciences vol 345
22. Johnson A T, Kouwenhoven L P, de Jong W, van der Vaart N C, Harmans C J P M and Foxon C T 1992 Zero-dimensional states and single electron charging in quantum dots Phys. Rev. Lett. 69 1592-5
23. Hofheinz M, Jehl X, Sanquer M, Molas G, Vinet M and Deleonibus S 2006 Simple and controlled single electron transistor based on doping modulation in silicon nanowires Appl. Phys. Lett. 89 143504
24. Sellier H, Lansbergen G P, Caro J, Rogge S, Collaert N, Ferain I, Jurczak M and Biesemans S 2006 Transport spectroscopy of a single dopant in a gated silicon nanowire Phys. Rev. Lett. 97 206805